V-I Characteristics of Semiconductor Diode
To determine the V-I Characteristics of a pn junction diode
To draw the characteristics means behavior of current in forward and reverse bias of a semiconductor junction diode. This diode either made by silicon or germanium which has atomic number Z=14 or Z=32 respectively. There are some questions related to this science experiment, these can help you to understand it is working better. If you found any questions unanswerable you can ask me, I will help you.
Here some questions can help you understand the working of the laser.
1Q. What is semiconductor material?
2Q. What is the difference between intrinsic and extrinsic semiconductor?
3Q. What are trivalent and pentavalent impurities?
4Q. Tell names at least of three most used tri- and pentavalent impurities?
5Q. What is the depletion region how it is formed?
6Q. What is diffusion of charge?
7Q. What do you mean by the majority and minority charge carrier?
8Q. In n-type material what is majority charge carrier?
9Q. In n-type material what are minority charge carrier?
10Q. In p-type material what is majority charge carrier?
11Q.In p-type material what are minority charge carrier?
12Q. What do you understand by forward and reverse bias, show it by circuit diagram?
13Q. What is knee voltage for silicon and germanium diodes?
14Q. How did semiconductor atoms join with the neighbor atom?
15Q. Which bond semiconductor atoms develop among them for stable configuration.
Diode LASER or semiconductor laser based on the p-n junction principle but the material used to fabricate LASER show the optical property. When electron-hole recombination takes places. There are some basic question which will help you to understand better the working of semiconductor Laser and LEDs.
|Stewart and Gee’s Experiment||e m ratio||the ionization potential of mercury|
|Newton’s Ring experiment||pn junction semiconductor diode||Michelson Morley experiment|
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