V-I Characteristics of Semiconductor Diode

To determine the V-I Characteristics of a pn junction diode

To draw the characteristics means behavior of current in forward and reverse bias of a semiconductor junction diode. This diode either made by silicon or germanium which has atomic number Z=14 or Z=32 respectively. There are some questions related to this science experiment, these can help you to understand it is working better. If you found any questions unanswerable you can ask me, I will help you.

Here some questions can help you understand the working of the laser.

Viva questions:

1Q. What is semiconductor material?

2Q. What is the difference between intrinsic and extrinsic semiconductor?

3Q. What are trivalent and pentavalent impurities?

4Q. Tell names at least of three most used tri- and pentavalent impurities?

5Q. What is the depletion region how it is formed?

6Q. What is diffusion of charge?

7Q. What do you mean by the majority and minority charge carrier?

8Q. In n-type material what is majority charge carrier?

9Q. In n-type material what are minority charge carrier?

10Q. In p-type material what is majority charge carrier?

11Q.In p-type material what are minority charge carrier?

12Q. What do you understand by forward and reverse bias, show it by circuit diagram?

13Q. What is knee voltage for silicon and germanium diodes?

14Q. How did semiconductor atoms join with the neighbor atom?

15Q. Which bond semiconductor atoms develop among them for stable configuration.


Diode LASER or semiconductor laser based on the p-n junction principle but the material used to fabricate LASER show the optical property. When electron-hole recombination takes places. There are some basic question which will help you to understand better the working of semiconductor Laser and LEDs.

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1. Semiconductor LASER differ from solid, gas and liquid lasers in many ways, some are listed here,


2. Active region is


3. Which material is used here to construct the diode laser?


4. In a highly doped p-n junction diode laser (without biasing), the height of the p-type semiconductor’s conduction band position will be;


5. The energy of the photon emitted in semiconductor diode is equal to the


6. The active medium and pumping process in diode laser is,


7. When exciting current are small a small part of carriers undergo recombination. In this process emission will be;


8. When the current reach near to threshold value GaAs lasers efficiency reaches to 40%.  When cooled to 20 K, its out power reaches to 2 watts. This is the most continuous laser in all lasers. One of the characteristics of semiconductor LASER is also;


9. Will angular divergence vary with distance?


10. Which was the first laser to measure the distance between Earth and the Moon?


11. If angular divergence is 0.3 at a 300-meter distance. What will be it at 3 km?


12. A source is coherent it means;


13. The formula you used to determine the value of angular divergence, is a


Stewart and Gee’s Experiment e m ratio the ionization potential of mercury
 Newton’s Ring experiment  pn junction semiconductor diode Michelson Morley experiment

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