Ion beam implantation

Ion beam implantation remains a staple in the synthesizing of research quality materials. By allowing multiple ratios of materials to be present in a single sample, both time and resources can be preserved in the case study of materials. Optimal conditions for this particular ternary system are subject to small changes due to the requirements of individual experiments performed in the future.

This work has provided a foundation for future research into this incredibly versatile group IV semiconductor at IBMAL. Further simulations will be performed to explore the implantation of Sn onto a Ge implanted Si sample to further optimize the synthesis process. 

By accelerating an ion of an element at low temperatures into a solid target, physical, chemical, and electrical properties can be altered. Due to the ballistic nature of the implantation process, amorphousness is expected at the implanted layer.

This level of defects is of course, not ideal in many applications, thus necessitating an annealing process directly after implantation occurs to “restore lattice order”. How long and at what temperature annealing is done is a function of what ion was implanted, at what fluency, and at what energy.

Credits to: Randall L. Holliday et al.
Article published: J. Nucl. Phys. Mat. Sci. Rad. A. Vol. 7, No. 2, Feb. 2020, pp.65–70
READ HERE:

https://jnp.chitkara.edu.in/index.php/jnp/article/view/203/167

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